范德华力对硅基微悬臂梁抗粘附稳定性的影响

通过在硅微悬臂梁与基底表面上涂覆低表面能的憎水性OTS(CH3(CH2)17SiCl3)膜,以除去接触面间的表面张力;把梁与基底均接地,以除去接触面间的静电力,研究仅有范德华力作用时,硅微悬臂梁结构的抗粘附稳定性.根据两接触面均为粗糙表面的微观实际接触模型,在接触表面产生塑性变形的情况下,计算范德华粘附能大小,并分析表面形貌对其影响,得到粗糙表面接触的微梁抗粘附临界长度.     

Layer-number dependent high-frequency vibration modes in few-layer transition metal dichalcogenides induced by interlayer couplings

Two-dimensional transition metal dichalcogenides (TMDs) have attracted extensive attention due to their many novel properties. The atoms within each layer in two-dimensional TMDs are joined together by covalent bonds, while van der Waals interactions combine the layers together. This makes its lattice dynamics layer-number dependent. The evolutions of ultralow frequency (<50 cm^-1) modes, such as shear and layer-breathing modes have been well-established. Here, we review the layer-number dependent high-frequency (>50 cm^-1) vibration modes in few-layer TMDs and demonstrate how the interlayer coupling leads to the splitting of high-frequency vibration modes, known as Davydov splitting. Such Davydov splitting can be well described by a van der Waals model, which directly links the splitting with the interlayer coupling. Our review expands the understanding on the effect of interlayer coupling on the high-frequency vibration modes in TMDs and other two-dimensional materials.     

Epitaxy of Layered Orthorhombic SnS–SnSxSe(1−x) Core–Shell Heterostructures with Anisotropic Photoresponse

Vertical and in‐plane heterostructures based on van der Waals (vdW) crystals have drawn rapidly increasing attention owning to the extraordinary properties and significant application potential. However, current heterostructures are mainly limited to vdW crystals with a symmetrical hexagonal lattice, and the heterostructures made by asymmetric vdW crystals are rarely investigated at the moment. In this contribution, it is reported for the first time the synthesis of layered orthorhombic SnS–SnS_xSe_(1?x) core–shell heterostructures with well‐defined geometry via a two‐step thermal evaporation method. Structural characterization reveals that the heterostructures of SnS–SnS_xSe_(1?x) are in‐plane interconnected and vertically stacked, constructed by SnS_xSe_(1?x) shell heteroepitaxially growing on/around the pre‐synthesized SnS flake with an epitaxial relationship of (303)_SnS//(033)_SnSxSe(1?x), [010]_SnS//[100]_SnSxSe(1?x). On the basis of detailed morphology, structure and composition characterizations, a growth mechanism involving heteroepitaxial growth, atomic diffusion, as well as thermal thinning is proposed to illustrate the formation process of the heterostructures. In addition, a strong polarization‐dependent photoresponse is found on the device fabricated using the as‐prepared SnS?SnS_xSe_(1?x) core–shell heterostructure, enabling the potential use of the heterostructures as functional components for optoelectronic devices featured with anisotropy.     

Atomically Thin MoS2: A Versatile Nongraphene 2D Material

Two‐dimensional inorganic materials are emerging as a premiere class of materials for fabricating modern electronic devices. The interest in 2D layered transition metal dichalcogenides is especially high. Particularly, 2D MoS₂ is being heavily researched due to its novel functionalities and its suitability for a wide range of electronic and optoelectronic applications. In this article, the progress in mono/few layer(s) MoS₂ research is reviewed by focusing primarily on the layer dependent evolution of crystal, phonon, and electronic structure. The review includes extensive detail into the methodologies adapted for single or few layer(s) MoS₂ growth. Further, the review covers the versatility of 2D MoS₂ for a broad range of device applications. Recent advancements in the field of van der Waals heterostructures are also highlighted at the end of the review.     

Electric Field Tunable Interlayer Relaxation Process and Interlayer Coupling in WSe2/Graphene Heterostructures

Transition metal dichalcogenides van der Waals (vdWs) heterostructures present fascinating optical and electronic phenomena, and bear tremendous significance for electronic and optoelectronic applications. As the significant merits in vdWs heterostructures, the interlayer relaxation of excitons and interlayer coupling at the heterointerface reflect the dynamic behavior of charge transfer and the coupled electronic/structural characteristics, respectively, which may give rise to new physics induced by quantum coupling. In this work, upon tuning the photoluminescence (PL) properties of WSe₂/graphene and WSe₂/MoS₂/graphene heterostructures by virtue of electric field, it is demonstrated that the interlayer relaxation of excitons at the heterointerface in WSe₂/graphene, which is even stronger than that in MoS₂/graphene and WSe₂/MoS₂ , plays a dominant role in PL tuning in WSe₂/graphene, while the carrier population in WSe₂ induced by electric field has a minor contribution. In addition, it is discovered that the interlayer coupling between monolayer WSe₂ and graphene is enhanced under high electric field, which breaks the momentum conservation of first order Raman‐allowed phonons in graphene, yielding the enhanced Raman scattering of defects in graphene. The interplay between electric field and vdWs heterostructures may provide versatile approaches to tune the intrinsic electronic and optical properties of the heterostructures.     

微区电阻测试方法及新测试仪研制

文章对国内外开展微区薄层电阻测试的方法进行了综述，特别对改进范德堡四探针技术方法的测试原理、测试过程与测试结果进行了论述与分析，对微区电阻测试方法的进一步发展提出了一种可操作的方法，并研制出新型四探针测试样机。     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.     

Accurate higher-order analytical approximate solutions to nonconservative nonlinear oscillators and application to van der Pol damped oscillators

In general, this paper deals with general nonlinear oscillations of a nonconservative and single degree-of-freedom system with odd nonlinearity and, in particular, it presents accurate higher-order analytical approximate solutions to van der Pol damped nonlinear oscillators having odd nonlinearity and the Rayleigh equation. By combining the linearization of the governing equation with harmonic balancing and the method of averaging, we establish accurate analytical approximate solutions for the general weakly damped nonlinear systems. Unlike the classical harmonic balance method, simple linear algebraic equations instead of nonlinear algebraic equations are obtained upon linearization prior to harmonic balancing. The combination of these two methods results in very accurate transient response of the periodic solution. In addition and for the first time, this paper also presents a method for deducing fourth-, fifth- and higher-order linearized governing equations from the lower-order equations without the requirement of formulating the problem from the first principle. Three examples including the van der Pol damped nonlinear oscillator are presented to illustrate the excellent agreement with approximate solution using the exact frequency.     

低温下实际与理想气体状态方程的热物性比较

在现代工程中，有关低温气体热物性的研究已经取得了很大的进展。但是，如环境温度在-100℃～25℃的低温条件下，理想气体状态方程往往就不能满足实际计算的需要，这就需要低温下能较为正确地描述气体热物性的方程。实例计算显示，温度越低，理想气体状态方程的准确性越低，一般在低温下工程上选择范德瓦尔方程进行气体性质的计算。